In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 7 ( 2010-08-16)
Abstract:
We demonstrated the selective introduction of interstitial Zn defects (Zni•) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O–15ZnO–70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zni• is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zni• acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0