In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 14 ( 2010-10-04)
Abstract:
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
