In:
Journal of Applied Physics, AIP Publishing, Vol. 71, No. 4 ( 1992-02-15), p. 1764-1767
Abstract:
Metal-insulator-semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si3N4 and SiO2 insulators on La2CuO4 semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator-semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out-diffusion were observed and the Si3N4-semiconductor interface was found to be more stable than the SiO2-semiconductor one.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
