In:
Journal of Applied Physics, AIP Publishing, Vol. 72, No. 9 ( 1992-11-01), p. 4414-4416
Abstract:
A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a −VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
