In:
Applied Physics Letters, AIP Publishing, Vol. 98, No. 1 ( 2011-01-03)
Abstract:
Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75 cm2 V−1 s−1 at 100 Torr of O2. The O2 gas-sensing effect is examined for the [7] phenacene FET and for the 1D hydrocarbon picene FET. These FETs’ trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2011
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
