In:
Applied Physics Letters, AIP Publishing, Vol. 98, No. 9 ( 2011-02-28)
Kurzfassung:
We have compared the device performance of In0.7Ga0.3As HfO2 gate dielectric tunneling field-effect-transistors (TFETs) using p++/i or p++/n+ tunneling junctions. Devices with p++/n+ tunneling junctions show 61% and 20% higher current at Vg-Vth=0.5 and 2 V compared to the ones with p++/i junctions. These p++/n+ TFETs exhibit an on-current of 60 μA/μm and a minimum subthreshold swing of 84 mV/dec. Device characteristics of TFETs using p++/n+ tunneling diodes with various n+ region doping concentrations have been simulated, results indicate the doping concentration of the n+ region plays an important role in determining the on-current and providing a well gate-controlled tunneling behavior.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2011
ZDB Id:
211245-0
ZDB Id:
1469436-0
