In:
Journal of Applied Physics, AIP Publishing, Vol. 109, No. 10 ( 2011-05-15)
Kurzfassung:
Iron doped amorphous carbon (a-C: Fe) films on n-Si substrates were fabricated by pulse laser deposition technique. Barrier heights of the heterojunctions, measured in the electrical methods, were found to decrease gently below 300 °C and then increase anomalously thereafter. An interface energy band model was proposed to interpret the band structure of the heterojunctions as well as to calculate bandgaps of the a-C: Fe films. The abnormal increase in the barrier heights above 300 °C was attributed to the narrowing of π and π* bands due to the increased ordering degree of the sp2 clusters in a-C films, which was verified in Raman spectra and electron energy loss spectroscopy.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2011
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
