In:
Applied Physics Letters, AIP Publishing, Vol. 98, No. 22 ( 2011-05-30)
Abstract:
This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2GeO4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2011
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0