In:
Review of Scientific Instruments, AIP Publishing, Vol. 82, No. 11 ( 2011-11-01)
Abstract:
InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si3N4 membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.
Type of Medium:
Online Resource
ISSN:
0034-6748
,
1089-7623
Language:
English
Publisher:
AIP Publishing
Publication Date:
2011
detail.hit.zdb_id:
209865-9
detail.hit.zdb_id:
1472905-2
SSG:
11