In:
Journal of Applied Physics, AIP Publishing, Vol. 110, No. 10 ( 2011-11-15)
Kurzfassung:
This study elucidates the influence of the N-related localized states on electron emission properties of a GaAsN quantum well (QW) that is grown by molecular beam epitaxy. The N-related localized states in a GaAsN QW are identified as both optical and electrical electron trap states. Furthermore, exactly how N-related localized states influence the electron emission properties of a GaAsN quantum well is examined. The presence of N-related localized states effectively suppresses the tunneling emission of GaAsN QW electron states, leading to a long electron emission time for the GaAsN QW electron states. Thermal annealing can reduce the number of N-related localized states, resulting in a recovery of the tunneling emission for GaAsN QW electron states. Increasing the annealing temperature can restore the electron emission behavior of GaAsN QW to the typical electron tunneling emission for a high-quality QW.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2011
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
