In:
Journal of Applied Physics, AIP Publishing, Vol. 84, No. 3 ( 1998-08-01), p. 1567-1571
Abstract:
Single crystals of ZnAl2Se4, ZnAl2Se4:Co2+, and ZnAl2Se4:Er3+ were grown by the chemical transport reaction method using iodine as a transporting material. It has been shown that these single crystals have a defect chalcopyrite structure and a direct band gap. The direct band gap at 13 K has been found to be 3.525 eV for ZnAl2Se4, 2.952 eV for ZnAl2Se4:Co2+, and 3.283 eV for ZnAl2Se4:Er3+, respectively. Impurity optical absorption spectra of ZnAl2Se4:Co2+ showed absorption characteristics of Co2+ ions due to electron transitions between their split energy levels under a Td symmetry crystal field. Photoluminescence spectra at 13 K of ZnAl2Se4 showed two emission bands centered at 470 and 799 nm. For ZnAl2Se4:Er3+, we observed sharp photoluminescence peaks due to emission transitions between the energy levels of Er3+ ions with S4 symmetry sites.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1998
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5