In:
Journal of Applied Physics, AIP Publishing, Vol. 87, No. 3 ( 2000-02-01), p. 1482-1484
Kurzfassung:
Hysteresis was observed with nonequilibrium characteristics in the sidegate voltage dependence of drain current when measuring the threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors in the voltage-controlled condition. Once the sidegate voltage is varied in a quasi-steady state, hysteresis disappears immediately. A new mechanism is presented to explain the phenomenon that hysteresis are related to electron capture and emission from EL2 deep center on the substrate side of channel-substrate junction.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2000
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
