In:
Applied Physics Letters, AIP Publishing, Vol. 100, No. 23 ( 2012-06-04)
Abstract:
This letter investigates asymmetrical degradation behavior induced by the self-heating effect in InGaZnO thin-film transistors. Both the surrounding oxide and other thermal insulating material, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO thin-film transistors. The heated channel layer enhances threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effect. Moreover, a non-uniform distribution of channel carrier concentration leads to an uneven temperature distribution through the InGaZnO active layer and results in the asymmetrical degradation behavior after self-heating operation.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0