In:
Journal of Applied Physics, AIP Publishing, Vol. 112, No. 5 ( 2012-09-01)
Abstract:
High electron sheet concentrations of ∼1015 cm−2 result from polarization doping with compositionally graded AlGaN films grown on unintentionally doped GaN templates which exhibit background electron concentrations of ∼1016 cm−3. Similar graded films grown on semi-insulating (SI), free standing GaN substrates exhibited carrier concentrations two orders less. Transport studies of the as-grown materials using temperature dependent Hall effect revealed a very weak temperature dependence of the carrier concentration and mobility as compared to traditionally doped films using Si as a dopant. And qualitative modeling of the electron mobility indicates that alloy scattering and charged dislocation scattering are the most significant contributors to limiting the mobility over the entire temperature range.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
