In:
Applied Physics Letters, AIP Publishing, Vol. 103, No. 10 ( 2013-09-02)
Kurzfassung:
In this report, we describe the selective wet thermal oxidation of AlAsSb layers lattice-matched on GaSb substrate for lateral oxide-confinement in mid-infrared lasers. A two-step process of wet thermal oxidation followed by thermal annealing at a higher temperature was used. Raman spectroscopy revealed the formation of antimony oxides and the volatilization of these oxidation byproducts after post-oxidation annealing. Using this method, we obtained higher electrical resistivity of the annealed oxide, which was suitable for confinement applications.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2013
ZDB Id:
211245-0
ZDB Id:
1469436-0