In:
Applied Physics Letters, AIP Publishing, Vol. 103, No. 22 ( 2013-11-25)
Abstract:
Amorphous InGaZnO/single-walled carbon nanotubes (a-IGZO/SWNTs) composite thin-film transistors were fabricated with sol-gel method. The SWNTs supply the enhanced-current path for carrier transportation, and the contact resistance was optimized by incorporating SWNTs as well. The threshold voltage (Vth) was modulated by adjusting the Ga content. High electrical performance was demonstrated, including a field-effect mobility of 132 cm2/V·s and a Vth of 0.8 V. We have fabricated large-scale working devices with channel lengths from 20 μm down to 0.7 μm. Moreover, the devices were stable over time. These results indicate that a-IGZO/SWNTs composite Thin-film transistors strongly sustain further investigation of their applicability
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
