In:
Applied Physics Letters, AIP Publishing, Vol. 104, No. 18 ( 2014-05-05)
Abstract:
We demonstrate charge modulation of over 1014 cm−2 electrons in a two-dimensional electron gas formed in SrTiO3/GdTiO3 inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO3 cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO3 impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 1014 cm−2.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0