In:
Applied Physics Letters, AIP Publishing, Vol. 104, No. 20 ( 2014-05-19)
Kurzfassung:
We report on near-infrared (NIR) electroluminescence (EL) from the light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures. NIR emissions peaking at ∼910, 1090, and 1370 nm, originated from intra-4f transitions in Nd3+ ions, can be activated by a forward bias voltage as low as ∼5 V. Such NIR EL is triggered by the energy transferred from TiO2 host to Nd3+ ions. It is found that the coexistence of anatase and rutile phases in the TiO2 host enables the device to exhibit pronounced Nd-related EL without concurrent emission from the TiO2 host itself, quite other than the case of existing only anatase phase in TiO2 host. We tentatively suggest that the anatase/rutile interface states play important role in the energy transfer from TiO2 host to Nd3+ ions.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2014
ZDB Id:
211245-0
ZDB Id:
1469436-0