In:
Applied Physics Letters, AIP Publishing, Vol. 110, No. 13 ( 2017-03-27)
Abstract:
We demonstrate intersubband polaritons in the short-infrared wavelength range (λ & lt; 3 μm) relying on the GaN/AlN semiconductor system. The demonstration is given for an intersubband transition centered at λ = 3.07 μm (E = 403 meV). The polaritonic dispersion is measured at room temperature: a Rabi energy of 53 meV (i.e., a minimum splitting of 106 meV), which represents 13.1% of the bare transition, is demonstrated. A metal-insulator-metal resonator architecture is employed, which proves to be efficient even at these short wavelengths.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0