In:
APL Materials, AIP Publishing, Vol. 5, No. 4 ( 2017-04-01)
Abstract:
We prepared a nonvolatile memory device that could be reversibly switched between a high and a low open-circuit voltage (Voc) regime. The device is composed of a solid electrolyte Li3PO4 film sandwiched between metal Li and Au electrodes: a Li/Li3PO4/Au heterostructure, which was fabricated at room temperature on a glass substrate. The bistable states at Voc ∼ 0.7 and ∼0.3 V could be reversibly switched by applying an external voltage of 2.0 and 0.18 V, respectively. The formation and deformation of an ultrathin Au–Li alloy at the Li3PO4/Au electrode interface were the origin of the reversible switching.
Type of Medium:
Online Resource
ISSN:
2166-532X
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
2722985-3