In:
Applied Physics Letters, AIP Publishing, Vol. 110, No. 17 ( 2017-04-24)
Abstract:
We investigate the carrier relaxation and charge transfer dynamics in type-II ZnO-SnO heterojunction thin films using wavelength-dependent femtosecond transient absorption measurements. Under SnO-selective excitation conditions, absorption signals related to ZnO are observed on a subpicosecond time scale, which indicates ultrafast electron transfer from SnO to ZnO. The spatial separation of electrons and holes across the ZnO-SnO interface leads to a long-lived carrier decay process with a lifetime of ∼4 ns, 2 times longer than resonant excitation of both ZnO and SnO in the heterostructures. Our results provide a framework for understanding the photophysics of tin oxide semiconductor heterostructures.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0