In:
Journal of Applied Physics, AIP Publishing, Vol. 125, No. 15 ( 2019-04-21)
Abstract:
We investigated the structural stability and electronic properties of stanene/graphene-like nitride (stanene/XN, X=Al, B, and Ga) heterostructures using first-principles calculations. The results reveal that stanene interacts with BN (GaN) via van der Waals interactions with a binding energy of 93 meV (171 meV) per Sn atom. In contrast, the stanene/AlN heterostructure shows a strong interlayer coupling, with a binding energy of 315 meV per Sn atom. The electronic structure of stanene/GaN shows a direct bandgap of 213 meV at the Dirac point. The stanene/AlN and stanene/GaN heterostructures have Schottky barriers of 1.383 and 1.243 eV, respectively, with p-type Schottky contacts. In addition, an n-type Schottky contact is formed in the stanene/BN heterostructure with a Schottky barrier of 2.812 eV. The results suggest that the studied heterostructures are potential candidates for stanene-based nanoelectronic applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2019
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
