In:
Applied Physics Letters, AIP Publishing, Vol. 41, No. 2 ( 1982-07-15), p. 174-176
Kurzfassung:
The sputtering of Si by 3-keV Ar+ ions under simultaneous exposure to a beam of XeF2 gas has been investigated. The masses and some energy distributions of the neutral particles emitted from the target have been determined by mass spectrometry and time of flight. We found the following Si-containing ions: Si+, SiF+, SiF+2, and SiF+3. The energy distributions of the sputtered particles cannot be explained by thermal desorption at the target temperature but can be interpreted as a collision cascadelike mechanism with a low surface binding energy.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
1982
ZDB Id:
211245-0
ZDB Id:
1469436-0