In:
Applied Physics Letters, AIP Publishing, Vol. 44, No. 9 ( 1984-05-01), p. 887-889
Abstract:
The Pd/SiOx/a-Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence-band discontinuity and the built-in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1984
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0