In:
Applied Physics Letters, AIP Publishing, Vol. 117, No. 18 ( 2020-11-02)
Kurzfassung:
We demonstrate the growth of full-composition-graded InxGa1−xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1−xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1−xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1−xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1−xN based photovoltaic devices.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2020
ZDB Id:
211245-0
ZDB Id:
1469436-0