In:
Review of Scientific Instruments, AIP Publishing, Vol. 92, No. 1 ( 2021-01-01)
Abstract:
We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.
Type of Medium:
Online Resource
ISSN:
0034-6748
,
1089-7623
Language:
English
Publisher:
AIP Publishing
Publication Date:
2021
detail.hit.zdb_id:
209865-9
detail.hit.zdb_id:
1472905-2
SSG:
11
