In:
Applied Physics Letters, AIP Publishing, Vol. 118, No. 9 ( 2021-03-01)
Abstract:
A silicon nitride (SiNx) film deposited at 500 °C by plasma-enhanced atomic layer deposition (PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). An interface enhancement technology featuring in situ low-damage NH3/N2 remote plasma pretreatments (RPPs) is developed prior to the SiNx gate dielectric deposition, which contributes to an improved surface morphology while remarkably suppressed interface oxides. It is revealed by constant-capacitance deep-level transient spectroscopy that both shallow and deep states at the PEALD-SiNx/III-nitride interface are reduced by about one order of magnitude by the RPP. The in situ RPP and PEALD-SiNx gate dielectric process are implemented into fabrication of enhancement-mode MIS-HEMTs on an ultrathin-barrier AlGaN/GaN heterostructure technology platform. The fabricated MIS-HEMTs deliver an improved threshold stability and maximum output current as compared with devices without the RPP.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2021
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0