In:
AIP Advances, AIP Publishing, Vol. 11, No. 10 ( 2021-10-01)
Kurzfassung:
In this work, a novel reverse blocking Schottky-drain Si–GaN monolithic integrated cascode FET was realized for the first time by using transfer printing and self-aligned etching technology. The threshold voltage is up to 4.5 V, which meets the needs of the power electronic system. The on-resistance is 57.1 Ω mm, and the on-voltage is 1.1 V. The forward/reverse breakdown voltage (at 10 µA/mm) reaches 1325/−1240 V for LGD = 18 µm. The mechanism of reverse blocking is proposed and analyzed from the point of view of circuits. In addition, the correctness of the mechanism is verified by simulation and experiment.
Materialart:
Online-Ressource
ISSN:
2158-3226
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2021
ZDB Id:
2583909-3