In:
Journal of Physics: Condensed Matter, IOP Publishing, Vol. 35, No. 46 ( 2023-11-20), p. 465701-
Abstract:
We propose SnBi 2 Te 4 to be a novel topological quantum material exhibiting temperature ( T ) mediated transitions between rich electronic phases. Our combined theoretical and experimental results suggest that SnBi 2 Te 4 goes from a low- T semimetallic phase to a high- T (room temperature) insulating phase via an intermediate metallic phase. Single crystals of SnBi 2 Te 4 are characterized by various experimental probes including synchrotron based x-ray diffraction, magnetoresistance, Hall effect, Seebeck coefficient and magnetization. X-ray diffraction data confirms an anomalous thermal expansion of the unit cell volume below ∼100 K, which significantly affects the bulk band structure and hence the transport properties. Simulated surface states are found to be topologically robust with varying T . This indirectly supports the experimentally observed paramagnetic singularity in the entire T -range. The proposed coexistence of such rich phases is a rare occurrence, yet it facilitates a fertile ground to tune them in a material driven by structural changes.
Type of Medium:
Online Resource
ISSN:
0953-8984
,
1361-648X
DOI:
10.1088/1361-648X/aceedf
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
1472968-4
detail.hit.zdb_id:
228975-1