In:
Nanotechnology, IOP Publishing, Vol. 34, No. 34 ( 2023-08-20), p. 345704-
Abstract:
Atomically thin narrow-bandgap layered PdSe 2 has attracted much attention due to its rich and unique electrical properties. For silicon-compatible device integration, direct wafer-scale preparation of high-quality PdSe 2 thin film on a silicon substrate is highly desired. Here, we present the low-temperature synthesis of large-area polycrystalline PdSe 2 films grown on SiO 2 /Si substrates by plasma-assisted metal selenization and investigate their charge carrier transport behaviors. Raman analysis, depth-dependent x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy were used to reveal the selenization process. The results indicate a structural evolution from initial Pd to intermediate PdSe 2– x phase and eventually to PdSe 2 . The field-effect transistors fabricated from these ultrathin PdSe 2 films exhibit strong thickness-dependent transport behaviors. For thinner films (4.5 nm), a record high on/off ratio of 10 4 was obtained. While for thick ones (11 nm), the maximum hole mobility is about 0.93 cm 2 V −1 S −1 , which is the record high value ever reported for polycrystalline films. These findings suggest that our low-temperature-metal-selenized PdSe 2 films have high quality and show great potential for applications in electrical devices.
Type of Medium:
Online Resource
ISSN:
0957-4484
,
1361-6528
DOI:
10.1088/1361-6528/acd855
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
1362365-5
SSG:
11
