In:
Semiconductor Science and Technology, IOP Publishing, Vol. 36, No. 3 ( 2021-03-01), p. 034003-
Abstract:
AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of the high potential of such structures for high-frequency and high-power electronic applications. Compared to conventional AlGaN/GaN heterostructures, the high spontaneous and piezoelectric polarization of AlScN can yield to a five-time increase in sheet carrier density of the two-dimensional electron gas formed at the AlScN/GaN heterointerface. Very promising radio-frequency device performance has been shown on samples deposited by molecular beam epitaxy. Recently, AlScN/GaN heterostructures have been demonstrated, which were processed by the more industrial compatible growth method metal-organic chemical vapor deposition (MOCVD). In this work, SiN x passivated MOCVD-grown AlScN/GaN heterostructures with improved structural quality have been developed. Analytical transmission electron microscopy, secondary ion mass spectrometry and high-resolution x-ray diffraction analysis indicate the presence of undefined interfaces between the epitaxial layers and an uneven distribution of Al and Sc in the AlScN layer. However, AlScN-based high-electron-mobility transistors (HEMT) have been fabricated and compared with AlN/GaN HEMTs. The device characteristics of the AlScN-based HEMT are promising, showing a transconductance close to 500 mS mm −1 and a drain current above 1700 mA mm −1 .
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/abd924
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2