In:
Chinese Physics B, IOP Publishing, Vol. 29, No. 3 ( 2020-03-01), p. 037301-
Kurzfassung:
The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO 2 /4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (∼ 4 × 10 10 cm −2 ⋅eV −1 @ E c − 0.2 eV) is demonstrated on SiO 2 /SiC stack formed by microwave plasma oxidation. And high quality SiO 2 with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm −2 ⋅eV −1 is realized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.
Materialart:
Online-Ressource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/ab68c0
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2020
ZDB Id:
2412147-2