In:
Chinese Physics B, IOP Publishing, Vol. 29, No. 3 ( 2020-03-01), p. 038501-
Abstract:
The effects of gate oxide traps on gate leakage current and device performance of metal–oxide–nitride–oxide–silicon (MONOS)-structured NAND flash memory are investigated through Sentaurus TCAD. The trap-assisted tunneling (TAT) model is implemented to simulate the leakage current of MONOS-structured memory cell. In this study, trap position, trap density, and trap energy are systematically analyzed for ascertaining their influences on gate leakage current, program/erase speed, and data retention properties. The results show that the traps in blocking layer significantly enhance the gate leakage current and also facilitates the cell program/erase. Trap density ∼ 10 18 cm −3 and trap energy ∼ 1 eV in blocking layer can considerably improve cell program/erase speed without deteriorating data retention. The result conduces to understanding the role of gate oxide traps in cell degradation of MONOS-structured NAND flash memory.
Type of Medium:
Online Resource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/ab695f
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2412147-2