In:
Chinese Physics B, IOP Publishing, Vol. 30, No. 11 ( 2021-11-01), p. 117102-
Kurzfassung:
We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS 2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS 2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future.
Materialart:
Online-Ressource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/abeee0
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2021
ZDB Id:
2412147-2