In:
Chinese Physics B, IOP Publishing, Vol. 30, No. 7 ( 2021-07-01), p. 077303-
Kurzfassung:
The effects of dry O 2 post oxidation annealing (POA) at different temperatures on SiC/SiO 2 stacks are comparatively studied in this paper. The results show interface trap density ( D it ) of SiC/SiO 2 stacks, leakage current density ( J g ), and time-dependent dielectric breakdown (TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, D it , J g , and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO 2 interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
Materialart:
Online-Ressource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/abf644
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2021
ZDB Id:
2412147-2