In:
Chinese Physics B, IOP Publishing
Abstract:
In this paper, dual-metal gate and gate-drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET). The effects of gate work function and gate-drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices, such as on-state current ( I on ), ambipolar current ( I amb ), transconductance ( g m ), cut-off frequency ( f T ) and gain-bandwidth product ( GBP ) are analyzed and compared in this work. And a combination of both the dual-metal gate and gate-drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET (CSP-DMUN-TFET), which contains a C-shaped pocket area that significantly increases the on-state current of the device, and this combination design substantially reduces the ambipolar current. The results show that the CSP-DMUN-TFET has excellent performance, including high I on (9.03×10 -4 A/μm), high I on / I off (~10 11 ), low SS avg (~13 mV/dec), low I amb (2.15×10 -17 A/μm). The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents, making it a potential replacement for next generation of semiconductor devices.
Type of Medium:
Online Resource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/acbaf3
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
2412147-2