In:
Journal of Semiconductors, IOP Publishing, Vol. 43, No. 3 ( 2022-03-01), p. 032801-
Abstract:
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/43/3/032801
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2484682-X