In:
Journal of Physics: Conference Series, IOP Publishing, Vol. 1719, No. 1 ( 2021-01-01), p. 012050-
Abstract:
A project on development of a satellite-borne silicon-based cosmic ray ion detector was started. Semiconductor detectors based on P-I-N junctions are widely used in space experiments due to their light weight, compact design and high stopping power. The position-sensitive parts of the detector are designed to be silicon-based detectors. A prototype silicon detector without the outermost layer of insulators was prepared. The detector is expected to have the potential to identify the elements of high energy ions using the ΔE-E technique. Thus, for the beginning step of this project, a detector response proportional to the deposited energy has to be confirmed. We set up a detection system of a mixed standard alpha source including Am-241, Pu239 and Cm-244 with our devices and a photodiode (Hamamatsu S1223 with glass removed). The detector response is indicated by the digitized signal pulse height distribution from a 2048-channel ADC. The feasibility of our devices to distinguish the difference of energy in terms of several hundred keV was confirmed. A linear relation between the pulse height peaks and the emitted energy of each radiation source was also indicated.
Type of Medium:
Online Resource
ISSN:
1742-6588
,
1742-6596
DOI:
10.1088/1742-6596/1719/1/012050
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
2166409-2
