In:
International Journal of Extreme Manufacturing, IOP Publishing, Vol. 6, No. 1 ( 2024-02-01), p. 015501-
Abstract:
This work develops a one-step van der Waals integration strategy to fabricate high-quality suspended graphene-hexagonal boron nitride heterostructure light emitter. Electrons in graphene are effectively heated up to 2800 K, leading to strong light emission with efficiency two orders of magnitude higher than previous reports. The electronic temperature is much higher than the lattice temperature of graphene, indicating out-of-equilibrium between electrons and acoustic phonons of graphene. Graphene light emitters demonstrate a ultrafast electrical modulation speed exceeding 1 GHz, six orders of magnitude faster than conventional bulk metals and semiconductors.
Type of Medium:
Online Resource
ISSN:
2631-8644
,
2631-7990
DOI:
10.1088/2631-7990/acfbc2
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2024
detail.hit.zdb_id:
2974128-2
