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Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation

Martin, Andreas ; Berger, Johannes ; Kamp, Angelika ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2023

In: IEEE Transactions on Device and Materials Reliability Vol. 23, No. 3 ( 2023-9), p. 317-327

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In: IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers (IEEE), Vol. 23, No. 3 ( 2023-9), p. 317-327

Type of Medium: Online Resource

ISSN: 1530-4388 , 1558-2574

URL: Article

DOI: 10.1109/TDMR.2023.3268236

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2023

detail.hit.zdb_id: 2061445-7

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