In:
Journal of the American Ceramic Society, Wiley, Vol. 98, No. 4 ( 2015-04), p. 1121-1127
Abstract:
Tungsten‐doped SnO 2 (WTO) thin films with a given thickness of about 300 nm have been prepared by magnetron sputtering with a substrate temperature in the range 400°C–700°C. The effects of substrate temperature on the structural, optical, and electrical properties and of WTO thin films have been investigated. A texture transition from (1 1 0) to (2 1 1) crystallographic orientations has experimentally been found by X‐ray diffraction measurements as substrate temperature is raised. It was found that all thin films showed smooth surface with no cracks and high transparency ( 〉 85%) with the optical band gap ranging from 4.22 to 4.32 eV. The mobility varied from 12.89 to 22.48 cm 2 ·(V·s) −1 without reducing the achieved high carrier concentration of about 1.6 × 10 20 cm −3 . Such an increase in mobility is shown to be clearly associated with the development of (2 0 0) but concurrent degradation of (1 1 0) in WTO thin films.
Type of Medium:
Online Resource
ISSN:
0002-7820
,
1551-2916
DOI:
10.1111/jace.2015.98.issue-4
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
2008170-4
detail.hit.zdb_id:
219232-9