In:
Journal of the American Ceramic Society, Wiley, Vol. 102, No. 4 ( 2019-04), p. 1893-1903
Abstract:
Microwave ceramic with low‐sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low‐temperature sintering and good microwave dielectric properties, CaMgSi 2 O 6 – x LiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi 2 O 6 ( x = 0) sintered at 1250°C, desirable microwave dielectric properties of ε r = 7.45, Qf = 64 800 GH z, and τ f = −34 ppm/°C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900°C when adding 2 wt% LiF into CaMgSi 2 O 6 . Furthermore, a secondary phase, Li 2 MgSiO 4 , occurred at x ≥ 1 wt%, and the densest microstructure was obtained at the x value of ~2 wt%. We propose that the high Qf value and the low‐sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg 2 SiO 4 ceramic, our study demonstrates that the approach of adding LiF can realize low‐temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low‐temperature sintering of electronic ceramics.
Type of Medium:
Online Resource
ISSN:
0002-7820
,
1551-2916
DOI:
10.1111/jace.2019.102.issue-4
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2008170-4
detail.hit.zdb_id:
219232-9
