In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 4 ( 2001-07-01), p. 1293-1305
Kurzfassung:
This article forms the second part of a three-part series which presents a systematic characterization of iodoheptafluoropropane (C3F7I) based oxide etch processes in an inductively coupled high density plasma etch tool. Parts I and III of the article discuss etch process behavior and effluent composition, respectively. The focus of this article is on the characterization of films deposited by 1-iodoheptafluoropropane (CF2I–CF2–CF3) processes using two techniques: X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry. A significant result obtained in this study is that, while iodoheptafluoropropane has a greater tendency to polymerize than its perfluorinated counterpart, C3F8, because of its lower F:C ratio, the C3F7I etch process is driven, in large part, by physical mechanisms stemming from bombardment of the wafer surface by massive iodine ions. The mechanisms discussed in this article provide a consistent explanation that reconciles the highly polymerizing behavior of iodoheptafluoropropane with its relatively low mask and stop layer selectivity, as compared to a C3F8 based process in the same inductively coupled etch tool.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2001
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
