In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 1191-1195
Abstract:
We report on ZnO-based thin-film transistors (TFTs) fabricated using SiO2/p-Si substrates on which their ZnO channel layers have been deposited by rf sputtering at various temperatures: room temperature (RT), 100, and 200 °C. When they went through rapid thermal annealing in forming gas ambient (H2:N2=1:10) for n-type doping, the highest field effect mobility of ∼1.93 cm2/V s was achieved from ZnO-TFTs prepared using the deposition temperature of 200 °C while a low mobility (∼0.2 cm2/V s) was from TFTs using RT-deposited ZnO. However, the TFT sample using 200 °C deposited ZnO, unlike the others, revealed a very large amount of off-state current resulting in the on/off current ratio of only ∼102. It is because the ZnO layer deposited at 200 °C is too conductive to act as an optimum TFT channel. It is concluded that optimal ZnO-based TFTs are obtained using the medium deposition temperature of 100 °C.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
