In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 6 ( 2004-11-01), p. 2885-2890
Abstract:
Electron projection lithography (EPL) is a realistic technology for the 65nm node and below, as a complementary technology of optical lithography especially for contacts and gate layers because of its high resolution and large process margin. Nikon has developed an EPL exposure tool as an electron-beam (EB) stepper and the first generation EB stepper; NSR-EB1A is now almost completed as an R & D tool for the 65nm technology node. Using a ϕ200mm reticle, a 20mm×25mm exposure field is realized. Full-field exposure performance of NSR-EB1A is shown. A 70nm isolated line and 1:1 nested lines are simultaneously resolved, as are 50nm 1:2 nested lines. 60nm contact holes are resolved with a depth of focus over a 10μm range and dosage window over ±6%. Stitching accuracy is about 20nm (3σ) and the single machine overlay is about 30nm (mean + 3σ). These data mean sufficient performance for device manufacturing of the 65nm technology node. The concept of a large subfield is one candidate for resolution and throughput enhancement in EPL production tool. The Coulomb blur is directly measured by an aerial image sensor for a large subfield and small beam half-angle, and the data show good agreement with simulations. It is shown that throughput over 20 wafers per hour (ϕ300mm) is realistic and achievable in a production tool of a 45nm technology node.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
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3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
