In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 23, No. 4 ( 2005-07-01), p. 890-893
Abstract:
In this study (Pb,Sr)TiO3 (PST) thin films were etched with inductively coupled Cl2∕(Cl2+Ar) plasmas. The etch characteristics of PST thin films as a function of Cl2∕(Cl2+Ar) gas mixtures were analyzed by using a quadrupole mass spectrometer. Systematic studies were carried out as a function of the etching parameters, including the radio frequency power and the working pressure. The maximum PST film etch rate is 56.2nm∕min, because a small addition of Cl2 to the Cl2∕Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of a chemical reaction is relatively low due to low volatility of the etching products.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2005
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
