In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 23, No. 4 ( 2005-07-01), p. 1428-1433
Abstract:
In this article, an alternative method is presented to fabricate a planar-type oxide-confined 850-nm vertical-cavity surface-emitting laser (VCSEL). The threshold voltage, threshold current, light output power, external differential quantum efficiency, emission spectrum, and dynamic response of VCSELs planarized with a silicon oxide (SiOx) have been evaluated. These devices exhibit excellent static characteristics, including a threshold voltage (Vth) of 2.05V corresponding to a threshold current of 0.88mA, a minimum threshold current of 0.7mA near 60°C, a maximum output power of 4.28mW at 11mA, a maximum external differential quantum efficiency (ηex) of 43% just above threshold, and an operation temperature beyond 130°C. In addition, the transverse modes of the device initially are low-order, while high-order modes appear at elevated current levels. The fundamental transverse mode at the longest wavelength increases with injected current with a redshift of 0.49nm∕mA due to the Joule effect. Since the thermal resistance of the VCSEL with a SiOx buried layer is less than that of device without it, the VCSEL with the buried layer displays less redshift and better performance. Finally, the VCSEL with a SiOx buried layer shows a clear eye-opening feature as operating at 2.488Gbit∕s with a bias current of 2mA. Further increasing the current level, the device can work at the maximum bit rate of 8Gbit∕s and a bias current of 3.7mA.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2005
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
