In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 6 ( 2008-11-01), p. 1831-1833
Kurzfassung:
This study explores the growth and effects of a ten-period InAs∕GaAs quantum-dot infrared photodetector (QDIP). With a uniform quantum-dot (QD) size distribution and a QD density of 2.8×1010cm−2, this 10K photoluminescence spectrum shows a peak energy at 1.07eV and a narrow full width at half maximum of 31.7meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7A∕W at −1.1V. Another noticeable observation in the spectral response of the device is the 6μm peak detection wavelength with a high spectral broadening Δλ∕λ of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2008
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
