In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 6 ( 2008-11-01), p. 2441-2446
Abstract:
Computational efficiency of the models used in optical proximity correction (OPC) continues to be important in photolithography employing resolution enhancement. Improved hardware and model efficiency can mitigate the increase in run time resulting from the rise in modeling complexity necessary to meet advanced semiconductor process requirements. The current approach for fast image calculations in OPC utilizes the Hopkins formulation of the imaging equations combined with the sum-of-coherent-systems (SOCS) approximation. In this paper, approaches to identify the SOCS terms, which can be neglected in an OPC model applied to a given layout, are explored. One approach is quantified in terms of computational efficiency and model accuracy. The pattern-specific computational efficiency improvement ranges from 7% to 55% for six different patterning conditions used in 193nm immersion lithography at the 45nm semiconductor technology node.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2008
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
