In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 27, No. 3 ( 2009-05-01), p. 1195-1199
Abstract:
The authors report on the development of a molecular beam epitaxy production process for the epitaxial growth of high quality, single crystal, single phase SrTiO3 (STO) films on Si substrates with diameter up to 8in. Reflection high-energy electron diffraction indicated that the STO growths proceeded two dimensionally with excellent stoichiometric control, as confirmed by Rutherford backscattering spectroscopy measurement. Excellent crystalline quality has been confirmed by x-ray diffraction rocking curves of the STO (200) reflection with narrow full width at half maximum of 0.06° for a 1200Å thin film. Atomic force microscopy images show smooth, defect-free STO surface with a root-mean-square roughness value as low as ∼0.6Å. Cross-sectional transmission electron microscope images reveal an abrupt interface between STO and Si, with a very thin SiO2 interfacial layer.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0